Samsung unveils 400-layer NAND and zHBM memory for AI

Samsung Electronics used the Future of Memory and Storage conference in Santa Clara, California, on Tuesday to introduce a suite of next-generation memory technologies aimed at the surging demands of AI computing, including a 400-plus-layer V10 Bonding V-NAND prototype and concept models for vertically stacked memory architectures called zHBM and zNAND-O.news.samsung+1

The announcements come as Samsung reclaimed the top position in the global DRAM market during the second quarter of 2026 with a 39% share, according to Counterpoint Research, overtaking SK Hynix ↘ 3.12%, which held 26%.seekingalpha+1

A New Architecture for NAND and HBM

The V10 BV-NAND marks a milestone 13 years after Samsung introduced the industry's first vertical NAND in 2013. The new chip uses wafer-bonding technology to stack memory cells, increasing density by roughly 58% over the previous V9 generation while improving read, write and I/O performance.wkzo+2

Samsung also previewed zHBM, a concept architecture that stacks high-bandwidth memory directly above AI accelerators rather than placing it alongside processors as in conventional designs. The company said the approach could deliver approximately eight times the performance of HBM5, more than 10 times its memory density, triple its energy efficiency, and cut thermal resistance by more than half. A companion concept, zNAND-O, targets edge AI environments with low-latency, high-density storage in four- and eight-layer configurations.marketscreener+2

AI Demand Underpins the Push

As Reuters reported, AI workloads are expanding beyond model training into inference — the process of generating answers to user queries — driving fresh demand for high-capacity, power-efficient storage. Samsung disclosed last week that long-term agreements with customers could eventually account for 60% to 70% of its memory sales, a shift that analysts say could reduce the company's exposure to volatile spot pricing cycles.finimize+2

Citi analysts noted last month that DRAM and NAND supply-chain inventories remain well below historical levels despite concerns about softening smartphone demand in China.wkzo+1

Broader Roadmap

Beyond the headline prototypes, Samsung showcased HBM4E samples — which it began shipping to global customers in May — alongside an HBM5 model and LPDDR5X-PIM, its first low-power memory with processing-in-memory capability. The company positioned itself as the only integrated device manufacturer spanning memory, foundry, and advanced packaging, offering what it called "one-stop turnkey solutions" for AI semiconductor customers.news.samsung

Shares of memory chipmakers including Micron Technology ↘ 2.22% and SanDisk Western Digital Corporation ↗ 1.96% rose in premarket trading on Tuesday amid the broader wave of AI-driven optimism in the sector.stocktwits